Impact of surface chemical treatment on capacitance-voltage characteristics of GaAs metal-oxide-semiconductor capacitors with Al 2 O 3 gate dielectric
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Interface studies of GaAs metal-oxide-semiconductor structures using atomic-layer-deposited HfO2/Al2O3 nanolaminate gate dielectric
A systematic capacitance-voltage study has been performed on GaAs metal-oxide-semiconductor MOS structures with atomic-layer-deposited HfO2/Al2O3 nanolaminates as gate dielectrics. A HfO2/Al2O3 nanolaminate gate dielectric improves the GaAs MOS characteristics such as dielectric constant, breakdown voltage, and frequency dispersion. A possible origin for the widely observed larger frequency dis...
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متن کاملCapacitance-voltage studies of atomic-layer-deposited MOS structrures on Gallium Arsenide and other III-V compound semiconductors Master of Science in Electrical and Computer Engineering P. Ye, Chair
Yang, Tian M.S.E.C.E, Purdue University, December, 2007. Capacitance-voltage studies of atomic-layer-deposited MOS structrures on Gallium Arsenide and other III-V compound semiconductors . Major Professor: Peide Ye. Si-based CMOS devices with traditional structure are approaching the fundamental physical limits. New device structures and materials must be explored to continue the trend of incre...
متن کاملGe MOS Capacitors with Thermally Evaporated HfO2 as Gate Dielectric
We have investigated the characteristics of thermally evaporated hafnium oxide HfO2 films on germanium substrates. Surface roughness of the HfO2 film was studied by scanning electron microscopy. The presence of crystalline GeO2 was evident from X-ray diffraction results on as-deposited films. Capacitance–voltage C-V and current–voltage I-V measurements of the asdeposited metal-oxide semiconduct...
متن کاملMain determinants for III-V metal-oxide-semiconductor field-effect transistors (invited)
Lacking a suitable gate insulator, practical GaAs metal-oxide-semiconductor field-effect transistors MOSFETs have remained all but a dream for more than four decades. The physics and chemistry of III–V compound semiconductor surfaces or interfaces are problems so complex that our understanding is still limited even after enormous research efforts. Most research is focused on surface pretreatmen...
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تاریخ انتشار 2014